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Equipment NTT AT

AlGaN/GaN on Si, SiC, Sap, GaN Epi-wafers
INDUSTRIAL

GaN epitaxial wafers with high mobility for electronic devices. • GaN epitaxial wafers on various substrates (Si, SiC, Sapphire, GaN) grown by MOCVD. • Novel growth technique based on the cutting-edge technologies of NTT Laboratories.

© 2012—2023, Japan Machinery Company
Tokyo, Japan
JMC Bldg., 4th Floor
2-19-6 Higashirokugo Ota-Ku, Tokyo, 144-0046,
Japan
Phone: (81)-3-4500-6508
Fax: (81)-3-3730-3781

Moscow, Russia
Business Center «Na Leningradke», office.3
Moscow, Leningradskoe shosse 29,
125212, Russia
Tel: +(7) 499-678-23-18
Fax: +(7) 985-767-01-11
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